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| MCP14E6/7/8 2.0A Dual High-Speed Power MOSFET Driver With Enable Features * High Peak Output Current: 2.0A (typical) * Independent Enable Function for Each Driver Output * Wide Input Supply Voltage Operating Range: - 4.5V to 18V * Low Shoot-Through/Cross-Conduction Current in Output Stage * High Capacitive Load Drive Capability: - tR: 12 ns with 1000 pF load (typical) - tF: 15 ns with 1000 pF load (typical) * Short Delay Times: 45 ns (typical) * Low Supply Current: - With Logic `1' Input/Enable - 1 mA (typical) - With Logic `0' Input/Enable - 300 A (typical) * Latch-up Protected: Passed JEDEC JESD78A * Logic Input will Withstand Negative Swing, up to 5V * Space-Saving Packages: - 8-Lead SOIC, PDIP, 6x5 DFN General Description The MCP14E6/7/8 devices are high-speed MOSFET drivers, capable of providing 2.0A of peak current. The dual inverting, dual non-inverting and complementary outputs are directly controlled from either TTL or CMOS (3V to 18V). These devices also feature low shoot-through current, fast rise/fall times and propagation delays, which make them ideal for high switching frequency applications. The MCP14E6/7/8 devices operate from a 4.5V to 18V single power supply and can easily charge and discharge 1000 pF of MOSFET gate capacitance. They provide low enough impedances, in both the ON and OFF states, to ensure the MOSFETs' intended state will not be affected, even by large transients. The additional control of the MCP14E6/7/8 outputs is allowed by the use of separate enable functions. The ENB_A and ENB_B pins are active-high and are internally pulled up to VDD. The pins may be left floating for standard operation. The MCP14E6/7/8 dual output, 2.0A driver family is offered in both surface-mount and pin-through-hole packages with a -40oC to +125oC temperature rating. The low thermal resistance of the thermally enhanced DFN package allows greater power dissipation capability for driving heavier capacitive or resistive loads. These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. The devices are fully latch-up protected when tested according to JEDEC JESD78A. All terminals are fully protected against Electrostatic Discharge (ESD), up to 4 kV (HBM) or 400V (MM). Applications * * * * Switch Mode Power Supplies Pulse Transformer Drive Line Drivers Motor and Solenoid Drive (c) 2011 Microchip Technology Inc. DS25006A-page 1 MCP14E6/7/8 Package Types MCP14E7 PDIP, SOIC ENB_A 1 IN A 2 GND 3 IN B 4 MCP14E6 8 ENB_B ENB_B 7 OUT A 6 VDD 5 OUT B OUT A VDD OUT B MCP14E8 6x5 DFN* ENB_B OUT A VDD OUT B ENB_A 1 IN A 2 GND 3 IN B 4 EP 9 8 ENB_B ENB_B 7 OUT A 6 VDD 5 OUT B OUT A VDD OUT B ENB_B OUT A VDD OUT B MCP14E7 MCP14E6 MCP14E8 * Includes Exposed Thermal Pad (EP); see Table 3-1. Functional Block Diagram(1) Inverting VDD VDD Internal Pull-up Non-Inverting Enable Output Input Effective Input C = 20 pF (Each Input) GND 4.7 V 4.7 V MCP14E6 MCP14E7 MCP14E8 Dual Inverting Dual Non-Inverting One Inverting, One Non-Inverting Note 1: Unused inputs should be grounded. DS25006A-page 2 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings Supply Voltage ................................................................+20V Input Voltage ............................... (VDD + 0.3V) to (GND - 5V) Enable Voltage .............................(VDD + 0.3V) to (GND - 5V) Input Current (VIN>VDD)................................................50 mA Package Power Dissipation (TA = +50oC) 8L-DFN ........................................................................ Note 3 8L-PDIP ........................................................................1.12W 8L-SOIC .....................................................................669 mW DC CHARACTERISTICS(2) Electrical Specifications: Unless otherwise indicated, TA = +25C, with 4.5V VDD 18V. Parameters Input Logic `1', High Input Voltage Logic `0', Low Input Voltage Input Current Input Voltage Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Switching Time(1) Rise Time Fall Time Propagation Delay Time Propagation Delay Time High-Level Input Voltage Low-Level Input Voltage Hysteresis Enable Pull-up Impedance Enable Pin Leakage Current Propagation Delay Time Propagation Delay Time Note 1: 2: 3: tR tF tD1 tD2 VEN_H VEN_L VHYST RENBL IENBL tD3 tD4 -- -- -- -- 2.4 -- -- 0.7 -- -- -- 12 15 45 45 1.6 1.2 400 1.6 10 35 35 30 35 55 55 -- 0.8 -- 3.0 -- 65 65 ns ns ns ns V V mV M A ns ns VDD = 14V, ENBL = GND VDD = 12V, ENB_A = ENB_B = GND VDD = 12V, Figure 4-3 VDD = 12V, Figure 4-3 Figure 4-1, Figure 4-2, CL = 1000 pF Figure 4-1, Figure 4-2, CL = 1000 pF Figure 4-1, Figure 4-2 Figure 4-1, Figure 4-2 VDD = 12V, Low-to-High Transition VDD = 12V, High-to-Low Transition VOH VOL ROH ROL IPK VDD - 0.025 -- -- -- -- -- -- 5 5 2 -- 0.025 8 8 -- V V A DC Test DC Test IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VDD = 18V(2) VIH VIL IIN VIN 2.4 -- -1 -5 1.5 1.3 -- -- -- 0.8 1 VDD + 0.3 V V A V 0V VIN VDD Sym Min Typ Max Units Conditions Enable Function (ENB_A, ENB_B) Switching times are ensured by design. Tested during characterization, not production tested. Package power dissipation is dependent on the copper pad area of the PCB. (c) 2011 Microchip Technology Inc. DS25006A-page 3 MCP14E6/7/8 DC CHARACTERISTICS(2) (CONTINUED) Electrical Specifications: Unless otherwise indicated, TA = +25C, with 4.5V VDD 18V. Parameters Power Supply Supply Voltage Supply Current VDD IDD IDD IDD IDD IDD IDD IDD IDD Note 1: 2: 3: 4.5 -- -- -- -- -- -- -- -- -- 1000 600 800 800 600 300 500 500 18.0 1800 900 1600 1600 1000 450 800 800 V A A A A A A A A VIN_A = 3V, VIN_B = 3V, ENB_A = ENB_B = High VIN_A = 0V, VIN_B = 0V, ENB_A = ENB_B = High VIN_A = 3V, VIN_B = 0V, ENB_A = ENB_B = High VIN_A = 0V, VIN_B = 3V, ENB_A = ENB_B = High VIN_A = 3V, VIN_B = 3V, ENB_A = ENB_B = Low VIN_A = 0V, VIN_B = 0V, ENB_A = ENB_B = Low VIN_A = 3V, VIN_B = 0V, ENB_A = ENB_B = Low VIN_A = 0V, VIN_B = 3V, ENB_A = ENB_B = Low Sym Min Typ Max Units Conditions Switching times are ensured by design. Tested during characterization, not production tested. Package power dissipation is dependent on the copper pad area of the PCB. DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)(2) Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD 18V. Parameters Input Logic `1', High Input Voltage Logic `0', Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Switching Time Rise Time Fall Time Propagation Delay Time Propagation Delay Time Note 1: 2: (1) Sym VIH VIL IIN VOH VOL ROH ROL tR tF tD1 tD2 Min 2.4 -- -10 VDD - 0.025 -- -- -- -- -- -- -- Typ -- -- -- -- -- 8 8 23 23 50 50 Max -- 0.8 +10 -- 0.025 11 11 35 40 65 65 Units V V A V V ns ns ns ns Conditions 0V VIN VDD DC Test DC Test IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Figure 4-1, Figure 4-2, CL = 1000 pF Figure 4-1, Figure 4-2, CL = 1000 pF Figure 4-1, Figure 4-2 Figure 4-1, Figure 4-2 Switching times are ensured by design. Tested during characterization, not production tested. DS25006A-page 4 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)(2) (CONTINUED) Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD 18V. Parameters High-Level Input Voltage Low-Level Input Voltage Hysteresis Enable Pull-up Impedance Propagation Delay Time Propagation Delay Time Power Supply Supply Voltage Supply Current VDD IDD IDD IDD IDD IDD IDD IDD IDD Note 1: 2: 4.5 -- -- -- -- -- -- -- -- -- 1400 800 1300 1300 800 500 600 600 18.0 2200 1100 2000 2000 1200 600 900 900 V A A A A A A A A VIN_A = 3V, VIN_B = 3V, ENB_A = ENB_B = High VIN_A = 0V, VIN_B = 0V, ENB_A = ENB_B = High VIN_A = 3V, VIN_B = 0V, ENB_A = ENB_B = High VIN_A = 0V, VIN_B = 3V, ENB_A = ENB_B = High VIN_A = 3V, VIN_B = 3V, ENB_A = ENB_B = Low VIN_A = 0V, VIN_B = 0V, ENB_A = ENB_B = Low VIN_A = 3V, VIN_B = 0V, ENB_A = ENB_B = Low VIN_A = 0V, VIN_B = 3V, ENB_A = ENB_B = Low Sym VEN_H VEN_L VHYST RENBL tD3 tD4 Min 2.4 -- -- 0.7 -- -- Typ -- -- 0.4 1.6 60 70 Max -- 0.8 -- 3.0 80 85 Units V V V M ns ns VDD = 14V, ENB_A = ENB_B = GND VDD = 12V, Figure 4-3 VDD = 12V, Figure 4-3 Conditions VDD = 12V, Low-to-High Transition VDD = 12V, High-to-Low Transition Enable Function (ENB_A, ENB_B) Switching times are ensured by design. Tested during characterization, not production tested. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V. Parameters Temperature Ranges Specified Temperature Range Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance, 8L-6x5 DFN Thermal Resistance, 8L-PDIP Thermal Resistance, 8L-SOIC JA JA JA -- -- -- 35.7 89.3 149.5 -- -- -- C/W C/W C/W Typical four-layer board with vias to ground plane TA TJ TA -40 -- -65 -- -- -- +125 +150 +150 C C C Sym Min Typ Max Units Conditions (c) 2011 Microchip Technology Inc. DS25006A-page 5 MCP14E6/7/8 NOTES: DS25006A-page 6 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25C with 4.5V VDD 18V. 160 140 6,800 pF 180 160 6,800 pF 2,200 pF 1,000 pF 3,300 pF Rise Time (ns) ) 120 s n 100 ( e m 80 i T e 60 s i R 40 20 2,200 pF 1,000 pF 3,300 pF Fall Time (ns) ) s 120 n ( e 100 m i T 80 l l a 60 F 40 20 0 140 470 pF 0 4 6 8 10 12 14 Supply Voltage (V) 16 18 470 pF 4 6 8 10 12 14 Supply Voltage (V) 16 18 FIGURE 2-1: Voltage. 160 140 Rise Time (ns) 120 100 Rise Time vs. Supply FIGURE 2-4: Voltage. 180 Fall Time vs. Supply 5V 160 140 Fall Time (ns) 120 100 80 60 40 20 10000 0 1000 5V 12V 12V 80 60 40 20 0 1000 Capacitive Load (pF) 18V 18V 10000 Capacitive Load (pF) FIGURE 2-2: Load. 35 30 Time (ns) 25 20 15 10 -40 -25 -10 5 tRISE tFALL Rise Time vs. Capacitive FIGURE 2-5: Load. 60 Fall Time vs. Capacitive VDD = 18V VDD = 12V Propagation Delay (ns) CLOAD = 1,000pF 55 tD1 50 tD2 45 40 20 35 50 65 80 95 110 125 Temperature (C) 4 5 6 7 8 9 10 11 12 Input Amplitude (V) FIGURE 2-3: Temperature. Rise and Fall Times vs. FIGURE 2-6: Amplitude. Propagation Delay vs. Input (c) 2011 Microchip Technology Inc. DS25006A-page 7 MCP14E6/7/8 Note: Unless otherwise indicated, TA = +25C with 4.5V VDD 18V. 100 Propagation Delay (ns) tD1 75 Propagation Delay (ns) 70 65 60 55 50 45 40 35 4 6 8 10 12 14 16 18 VDD = 12V tD1 90 80 70 60 50 40 30 tD2 tD2 -40 -25 -10 5 20 35 50 65 80 95 110 125 Supply Voltage (V) Temperature (C) FIGURE 2-7: Supply Voltage. 0.80 Quiescent Current (mA) Propagation Delay Time vs. FIGURE 2-10: Temperature. 1.4 Propagation Delay Time vs. Quiescent Current (mA) 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 4 Input/Enable = 1 VDD = 18V Input/Enable = 1 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Input/Enable = 0 Input/Enable = 0 6 8 10 12 14 16 18 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (C) Supply Voltage (V) FIGURE 2-8: Supply Voltage. 13 11 ROUT-HI () 9 7 5 3 1 4 6 8 TA = +25C TA = +125C Quiescent Current vs. FIGURE 2-11: Temperature. 16 Quiescent Current vs. VIN = 0V (MCP14E6) VIN = 5V (MCP14E7) 14 12 ROUT-LO () 10 8 6 4 2 TA = +125C VIN = 5V (MCP14E6) VIN = 0V (MCP14E7) TA = +25C 10 12 14 16 18 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage (V) FIGURE 2-9: Output Resistance (Output High) vs. Supply Voltage. FIGURE 2-12: Output Resistance (Output Low) vs. Supply Voltage. DS25006A-page 8 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 Note: Unless otherwise indicated, TA = +25C with 4.5V VDD 18V. 160 Supply Current (mA) 100 kHz Supply Current (mA) 140 120 100 80 60 40 20 VDD = 18V 50 kHz 1000 kHz 500 kHz 200 kHz 0 1000 Capacitive Load (pF) 100 90 80 70 60 50 40 30 20 10 0 VDD = 18V 6,800 pF 3,300 pF 2,200 pF 1,000 pF 470 pF 10000 10 100 Frequency (kHz) 1000 FIGURE 2-13: Capacitive Load. 100 Supply Current (mA) 80 60 40 20 1000 kHz 500 kHz Supply Current vs. FIGURE 2-16: Frequency. 80 Supply Current vs. VDD = 12V 100 kHz 50 kHz Supply Current (mA) 70 60 50 40 30 20 10 VDD = 12V 6,800 pF 3,300 pF 2,200 pF 1,000 pF 200 kHz 470 pF 0 1000 Capacitive Load (pF) 0 10000 10 100 Frequency (kHz) 1000 FIGURE 2-14: Capacitive Load. 50 VDD = 6V 45 40 35 30 25 20 1000 kHz 15 500 kHz 10 5 0 1000 Supply Current vs. FIGURE 2-17: Frequency. 40 Supply Current vs. 50 kHz 100 kHz VDD = 6V Supply Current (mA) Supply Current (mA) 35 30 25 20 15 10 5 0 6,800 pF 3,300 pF 2,200 pF 1,000 pF 200 kHz 470 pF 10000 Capacitive Load (pF) 10 100 Frequency (kHz) 1000 FIGURE 2-15: Capacitive Load. Supply Current vs. FIGURE 2-18: Frequency. Supply Current vs. (c) 2011 Microchip Technology Inc. DS25006A-page 9 MCP14E6/7/8 Note: Unless otherwise indicated, TA = +25C with 4.5V VDD 18V. 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.65 Enable Hysteresis (V) Threshold (V) 0.60 0.55 0.50 0.45 0.40 0.35 0.30 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (C) -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (C) VDD = 18V VDD = 12V Input Threshold (V) VHI VLO FIGURE 2-19: Temperature. 1.8 1.7 Input Threshold (V) 1.6 1.5 1.4 1.3 1.2 1.1 1.0 4 6 8 VHI Input Threshold vs. FIGURE 2-22: Temperature. 1.E-07 Crossover Energy (A*sec) Enable Hysteresis vs. 1.E-08 VLO 1.E-09 10 12 14 16 18 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage(V) FIGURE 2-20: Voltage. 1.8 Enable Threshold (V) 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 VDD = 12V VEN_H Input Threshold vs. Supply Note: The values in this graph represent the loss seen by both drivers in a package during a complete cycle. For a single driver, divide the stated value by 2. For a single transition of a single driver, divide the stated value by 4. FIGURE 2-23: Supply Voltage. VEN_L Crossover Energy vs. -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (C) FIGURE 2-21: Temeprature. Enable Threshold vs. DS25006A-page 10 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 3.0 PIN DESCRIPTIONS PIN FUNCTION TABLE Symbol Description MCP14E6 ENB_A IN A GND IN B OUT B VDD OUT A ENB_B EP MCP14E7 ENB_A IN A GND IN B OUT B VDD OUT A ENB_B EP MCP14E8 ENB_A IN A GND IN B OUT B VDD OUT A ENB_B EP Ouptut A Enable Input A Ground Input B Output B Supply Input Output A Output B Enable Exposed Metal Pad (DFN package only). Exposed pad is electrically isolated. The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PDIP, SOIC, 6x5 DFN 1 2 3 4 5 6 7 8 9 3.1 Enable A (ENB_A) 3.5 Supply Input (VDD) The ENB_A pin is the enable control for Output A. This enable pin is internally pulled up to VDD for active-high operation and can be left floating for standard operation. When the ENB_A pin is pulled below the enable pin, Low Level Input Voltage (VEN_L), Output A will be in the OFF state, regardless of the input pin state. VDD is the bias supply input for the MOSFET driver and has a voltage range of 4.5V to 18V. This input must be decoupled to ground with a local ceramic capacitor. This bypass capacitor provides a localized lowimpedance path for the peak currents that are provided to the load. 3.2 Control Inputs A and B (IN A; IN B) 3.6 Enable B (ENB_B) The MOSFET driver inputs are a high-impedance TTL/CMOS compatible input. The inputs also have hysteresis between the high and low input levels, allowing them to be driven from slow rising and falling signals, and to provide noise immunity. The ENB_B pin is the enable control for Output B. This enable pin is internally pulled up to VDD for active-high operation, and can be left floating for standard operation. When the ENB_B pin is pulled below the enable pin, Low-Level Input Voltage (VEN_L), Output B will be in the OFF state, regardless of the input pin state. 3.3 Ground (GND) Ground is the device return pin. The ground pin should have a low-impedance connection to the bias supply source return. High peak currents will flow out the ground pin when the capacitive load is being discharged. 3.7 Exposed Metal Pad (EP) The exposed metal pad of the DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane, or other copper plane on a printed circuit board, to aid in heat removal from the package. 3.4 Outputs A and B (OUT A; OUT B) Outputs, A and B, are CMOS push-pull outputs that are capable of sourcing and sinking 2.0A of peak current (VDD = 18V). The low output impedance ensures the gate of the MOSFET will stay in the intended state, even during large transients. (c) 2011 Microchip Technology Inc. DS25006A-page 11 MCP14E6/7/8 NOTES: DS25006A-page 12 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 4.0 4.1 APPLICATION INFORMATION General Information VDD = 18V 1 F Input Input MCP14E6 1/2 MCP14E8 MOSFET drivers are high-speed, high-current devices which are intended to source/sink high-peak currents to charge/discharge the gate capacitance of external MOSFETs, or insulated gate bipolar transistors (IGBTs). In high-frequency switching power supplies, the Pulse-Width Modulation (PWM) controller may not have the drive capability to directly drive the power MOSFET. MOSFET drivers, like the MCP14E6/7/8 family, can be used to provide additional source/sink current capability. An additional degree of control has been added to the MCP14E6/7/8 family. There are seperate enable functions for each driver that allow for the immediate termination of the output pulse, regardless of the state of the input signal. 0.1 F Ceramic Output CL = 1000 pF Output CL = 1000 pF +5V Input 0V 18V Output 0V 10% tD1 90% 10% 90% 4.2 MOSFET Driver Timing The ability of a MOSFET driver to transition from a fully OFF state to a fully ON state are characterized by the drivers' rise time (tR), fall time (tF) and propagation delays (tD1 and tD2). The MCP14E6/7/8 family of drivers can typically charge and discharge a 1000 pF load capacitance, in approximately 12 ns, along with a typical matched propagation delay of 45 ns. Figure 4-1 and Figure 4-2 show the test circuit and timing waveform used to verify the MCP14E6/7/8 timing. VDD = 18V 1 F Input 0.1 F Ceramic Output CL = 1000 pF Output CL = 1000 pF tR tD2 90% tF 10% FIGURE 4-2: Waveform Non-Inverting Driver Timing 4.3 Enable Function The ENB_A and ENB_B enable pins allow the independent control of OUT A and OUT B, respectively. They are active-high and are internally pulled up to VDD so that the default state is to enable the driver. These pins can be left floating for normal operation. When an enable pin voltage is above enable pin high threshold voltage, (VEN_H), that driver output is enabled and allowed to react to changes in the INPUT pin voltage state. Similarly, when the enable pin voltage falls below the enable pin low threshold voltage, (VEN_L), that driver output is disabled and does not respond to the changes in the INPUT pin voltage state. When the driver is disabled, the output goes to a low state. Refer to Table 4-1 for enable pin logic. The threshold voltages of the enable function are compatible with logic levels. Hysteresis is provided to help increase the noise immunity of the enable function, avoiding false triggers of the enable signal during driver switching. For robust designs, it is recommended that the slew rate of the enable pin signal be greater than 1V/ns. There are propagation delays associated with the driver receiving an enable signal and the output reacting. These propagation delays, tD3 and tD4, are graphically represented in Figure 4-3. Input MCP14E6 1/2 MCP14E8 +5V Input 0V 10% 18V Output 0V tD1 90% 10% tF 90% tD2 tR 90% 10% FIGURE 4-1: Waveform. Inverting Driver Timing (c) 2011 Microchip Technology Inc. DS25006A-page 13 MCP14E6/7/8 TABLE 4-1: ENABLE PIN LOGIC MCP14E6 ENB_A H H H H L ENB_B H H H H L IN A H H L L X IN B H L H L X OUT A L L H H L OUT B L H L H L MCP14E7 OUT A H H L L L OUT B H L H L L MCP14E8 OUT A L L H H L OUT B H L H L L 4.5 5V ENB_x 0V tD3 PCB Layout Considerations VEN_H VEN_L Proper PCB layout is important in a high-current, fast switching circuit to provide proper device operation and robustness to the design. The PCB trace loop area and inductance should be minimized by the use of ground planes or trace under MOSFET gate drive signals, separate analog and power grounds, and local driver decoupling. Placing a ground plane beneath the MCP14E6/7/8 will help as a radiated noise shield, as well as providing some heat sinking for power dissipated within the device. VDD tD4 90% OUT x 10% 0V 4.6 Power Dissipation The total internal power dissipation in a MOSFET driver is the summation of three separate power dissipation elements (Figure 4-1). FIGURE 4-3: Enable Timing Waveform. EQUATION 4-1: P T = P L + PQ + P CC 4.4 Decoupling Capacitors Where: PT PL PQ PCC = = = = Total Power Dissipation Load Power Dissipation Quiesent Power Dissipation Operating Power Dissipation Careful layout and decoupling capacitors are highly recommended when using MOSFET drivers. Large currents are required to charge and discharge capacitive loads quickly. For example, approximately 1.8A are needed to charge a 1000 pF load with 18V in 10 ns. To operate the MOSFET driver over a wide frequency range, with low supply impedance, a ceramic and lowESR film capacitors are recommended to be placed in parallel between the driver, VDD and GND. A 1.0 F low-ESR film capacitor and a 0.1 F ceramic capacitor placed between pins, 6 and 3, should be used. These capacitors should be placed close to the driver to minimize the circuit board parasitics and provide a local source for the required current. 4.6.1 CAPACITIVE LOAD DISSIPATION The power dissipation caused by a capacitive load is a direct function of frequency, total capacitive load and supply voltage. The power lost in the MOSFET driver for a complete charging and discharging cycle of a MOSFET is: EQUATION 4-2: P L = f x C T x V DD Where: f = Switching frequency 2 CT = Total load capacitance VDD = MOSFET driver supply voltage DS25006A-page 14 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 4.6.2 QUIESCENT POWER DISSIPATION 4.6.3 OPERATING POWER DISSIPATION The power dissipation associated with the quiescent current draw depends upon the state of the input pin. The MCP14E6/7/8 devices have a quiescent current draw with a Logic '1' on the input pin of 1 mA (typical) and 300 A (typical) with a Logic '0'. The quiescent power dissipation is: The operating power dissipation occurs each time the MOSFET driver output transitions, because for a very short period of time, both MOSFETs in the output stage are ON, simultaneously. This cross-conduction current leads to a power dissipation described as: EQUATION 4-4: EQUATION 4-3: P Q = ( I QH x D + I QL x ( 1 - D ) ) x V DD Where: IQH = Quiescent Current in the High State D = Duty Cycle IQL = Quiescent Current in the Low State VDD = MOSFET Driver Supply Voltage P CC = CC x f x V DD Where: CC = f = VDD = Cross-Conduction Constant (A * sec) Switching Frequency MOSFET Driver Supply Voltage (c) 2011 Microchip Technology Inc. DS25006A-page 15 MCP14E6/7/8 NOTES: DS25006A-page 16 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 5.0 5.1 PACKAGING INFORMATION Package Marking Information 8-Lead DFN-S (5x6x1 mm) Example XXXXXXX XXXXXXX YYWW NNN MCP14E6 e3 E/MF^^ 1111 256 8-Lead PDIP Example XXXXXXXX XXXXXNNN YYWW MCP14E6 e3 E/P^^ 256 1111 8-Lead SOIC (.150") XXXXXXXX XXXXYYWW NNN Example MCP14E6E e3 SN^^ 1111 256 Legend: XX...X Y YY WW NNN e3 * Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. (c) 2011 Microchip Technology Inc. DS25006A-page 17 MCP14E6/7/8 /HDG 3ODVWLF 'XDO )ODW 1R /HDG 3DFNDJH 0) [ PP %RG\ >')16@ 1RWH )RU WKH PRVW FXUUHQW SDFNDJH GUDZLQJV SOHDVH VHH WKH 0LFURFKLS 3DFNDJLQJ 6SHFLILFDWLRQ ORFDWHG DW KWWSZZZPLFURFKLSFRPSDFNDJLQJ e b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page 18 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 /HDG 3ODVWLF 'XDO )ODW 1R /HDG 3DFNDJH 0) [ PP %RG\ >')16@ 381&+ 6,1*8/$7(' 1RWH )RU WKH PRVW FXUUHQW SDFNDJH GUDZLQJV SOHDVH VHH WKH 0LFURFKLS 3DFNDJLQJ 6SHFLILFDWLRQ ORFDWHG DW KWWSZZZPLFURFKLSFRPSDFNDJLQJ D D1 N b e N K L E E1 EXPOSED PAD NOTE 1 1 2 TOP VIEW 2 D2 BOTTOM VIEW 1 E2 NOTE 1 A A1 A2 A3 NOTE 2 8QLWV 'LPHQVLRQ /LPLWV 1XPEHU RI 3LQV 3LWFK 2YHUDOO +HLJKW 0ROGHG 3DFNDJH 7KLFNQHVV 6WDQGRII %DVH 7KLFNQHVV 2YHUDOO /HQJWK 0ROGHG 3DFNDJH /HQJWK ([SRVHG 3DG /HQJWK 2YHUDOO :LGWK 0ROGHG 3DFNDJH :LGWK ([SRVHG 3DG :LGWK &RQWDFW :LGWK &RQWDFW /HQJWK &RQWDFWWR([SRVHG 3DG 0RGHO 'UDIW $QJOH 7RS 1 H $ $ $ $ ' ' ' ( ( ( E / . I 0,1 0,//,0(7(56 120 %6& 5() %6& %6& %6& %6& 0$; 1RWHV 3LQ YLVXDO LQGH[ IHDWXUH PD\ YDU\ EXW PXVW EH ORFDWHG ZLWKLQ WKH KDWFKHG DUHD 3DFNDJH PD\ KDYH RQH RU PRUH H[SRVHG WLH EDUV DW HQGV 'LPHQVLRQLQJ DQG WROHUDQFLQJ SHU $60( <0 %6& %DVLF 'LPHQVLRQ 7KHRUHWLFDOO\ H[DFW YDOXH VKRZQ ZLWKRXW WROHUDQFHV 5() 5HIHUHQFH 'LPHQVLRQ XVXDOO\ ZLWKRXW WROHUDQFH IRU LQIRUPDWLRQ SXUSRVHV RQO\ 0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &% (c) 2011 Microchip Technology Inc. DS25006A-page 19 MCP14E6/7/8 1RWH )RU WKH PRVW FXUUHQW SDFNDJH GUDZLQJV SOHDVH VHH WKH 0LFURFKLS 3DFNDJLQJ 6SHFLILFDWLRQ ORFDWHG DW KWWSZZZPLFURFKLSFRPSDFNDJLQJ DS25006A-page 20 (c) 2011 Microchip Technology Inc. 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DS25006A-page 21 MCP14E6/7/8 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS25006A-page 22 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging (c) 2011 Microchip Technology Inc. DS25006A-page 23 MCP14E6/7/8 /HDG 3ODVWLF 6PDOO 2XWOLQH 61 1DUURZ PP %RG\ >62,&@ 1RWH )RU WKH PRVW FXUUHQW SDFNDJH GUDZLQJV SOHDVH VHH WKH 0LFURFKLS 3DFNDJLQJ 6SHFLILFDWLRQ ORFDWHG DW KWWSZZZPLFURFKLSFRPSDFNDJLQJ DS25006A-page 24 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 APPENDIX A: REVISION HISTORY Revision A (March 2011) * Original Release of this Document. (c) 2011 Microchip Technology Inc. DS25006A-page 25 MCP14E6/7/8 NOTES: DS25006A-page 26 (c) 2011 Microchip Technology Inc. MCP14E6/7/8 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device -X Temperature Range MCP14E6: MCP14E6T: MCP14E7: MCP14E7T: MCP14E8: MCP14E8T: /XX Package Examples: a) 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD 6x5 DFN package. MCP14E6T-E/MF: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, Tape and Reel 8LD 6x5 DFN package. MCP14E6-E/P: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD PDIP package. MCP14E6-E/SN: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD SOIC package. MCP14E6T-E/SN: 2.0A Dual Inverting MOSFET Driver, Tape and Reel, Extended Temperature, 8LD SOIC package. MCP14E7-E/MF: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD 6x5 DFN package. MCP14E7-E/P: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD PDIP package. MCP14E7-E/SN: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD SOIC package. MCP14E8-E/MF: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD 6x5 DFN package. MCP14E8-E/P: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD PDIP package. MCP14E8-E/SN: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD SOIC package. MCP14E6-E/MF: b) Device: 2.0A Dual MOSFET Driver, Inverting 2.0A Dual MOSFET Driver, Inverting, Tape and Reel (DFN and SOIC only) 2.0A Dual MOSFET Driver, Non-Inverting 2.0A Dual MOSFET Driver, Non-Inverting, Tape and Reel (DFN and SOIC only) 2.0A Dual MOSFET Driver, Complementary 2.0A Dual MOSFET Driver, Complementary, Tape and Reel (DFN and SOIC only) c) d) Temperature Range: E Package: * MF P SN = -40C to +125C e) = Dual, Flat, No Lead (6x5 mm Body), 8-lead = Plastic DIP, (300 mil body), 8-lead = Plastic SOIC (150 mil Body), 8-lead a) b) c) a) b) c) (c) 2011 Microchip Technology Inc. DS25006A-page 27 MCP14E6/7/8 NOTES: DS25006A-page 28 (c) 2011 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." * * Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2011, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-61341-023-3 Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. (c) 2011 Microchip Technology Inc. DS25006A-page 29 Worldwide Sales and Service AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Cleveland Independence, OH Tel: 216-447-0464 Fax: 216-447-0643 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 ASIA/PACIFIC Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 ASIA/PACIFIC India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 Japan - Yokohama Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-6578-300 Fax: 886-3-6578-370 Taiwan - Kaohsiung Tel: 886-7-213-7830 Fax: 886-7-330-9305 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 EUROPE Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 02/18/11 DS25006A-page 30 (c) 2011 Microchip Technology Inc. |
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